Search results for "Impurity diffusion"

Si self-diffusion in cubic B20-structured FeSi

2008

Self-diffusion of implanted 31Si in the e-phase FeSi (cubic B20-structure) has been determined in the temperature range 660–810 °C using the modified radiotracer technique. With an activation enthalpy of 2.30 eV and a pre-exponential factor of 15×10−8 m2 s−1 the silicon diffusivity was found to be slightly slower than Ge impurity diffusion in FeSi. This difference is proposed to originate from attractive elastic interactions prevailing between the slightly oversized Ge atoms and the Si sublattice vacancies. The results confirm the argument that 71Ge radioisotopes may be used to substitute the short-lived 31Si radiotracers when estimating self-diffusion in silicides.